Build a 900 pixel imaging sensor using atomically thin material

Build a 900 pixel imaging sensor using atomically thin material

APS 2D. a, 3D schematic (left) and optical image (right) of a single-layer MoS2 phototransistor integrated with a programmable gate stack. The local back-gate stacks, including an atomic layer deposition grown at 50 nm Al2O3 on Pt/TiN deposited by sputtering, are arranged in islands above a Si/SiO2 substrate. Monolayer MoS2 used in this study was …

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